Semiconductor devices and methods of fabricating the same
US9337149B2 · kind B2 · utility
15Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Apr 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices may include a substrate including an active region defined by a device isolation layer, source/drain regions in the active region, word lines extending in a first direction parallel to the active region and being arranged in a second direction crossing the first direction, a bit line pattern extending in the second direction and crossing over a portion of the active region positioned between the word lines, and a graphene pattern covering at least a portion of the bit line pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.