EMI shielding and thermal dissipation for semiconductor device
US9337153B2 · kind B2 · utility
3Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2011 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Dec 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A memory device including a metallic layer shielding electromagnetic radiation and/or dissipating heat, and a method of making the memory device, are disclosed. The metallic layer is formed on a metallic layer transfer assembly. The metallic layer transfer assembly and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the metallic layer is transferred from the shield to the encapsulated memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.