Patent · US Active

Hermetic wafer level packaging

US9337168B2 · kind B2 · utility

0Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 6, 2014
Grant dateMay 10, 2016
Priority date
Expiry dateFeb 6, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/1461
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Provided is a wafer level packaging. The packaging includes a first semiconductor wafer having a transistor device and a first bonding layer that includes a first material. The packaging includes a second semiconductor wafer having a second bonding layer that includes a second material different from the first material, one of the first and second materials being aluminum-based, and the other thereof being titanium-based. Wherein a portion of the second wafer is diffusively bonded to the first wafer through the first and second bonding layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.