Semiconductor device with air gap and method for fabricating the same
US9337202B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Sep 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first conductive structure including a first conductive pattern that is formed over a substrate, a second conductive structure formed adjacent to a sidewall of the first conductive structure, and an insulation structure including an air gap that is formed between the first conductive structure and the second conductive structure, wherein the second conductive structure includes a second conductive pattern, an ohmic contact layer that is to formed over the second conductive pattern, and a third conductive pattern that is formed over the ohmic contact layer and is separated from the first conductive pattern through the air gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.