Semiconductor device and manufacturing method thereof
US9337225B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2013 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Sep 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
A backside illumination semiconductor image sensing device includes a semiconductor substrate. The semiconductor substrate includes a radiation sensitive diode and a peripheral region. The peripheral region is proximal to a sidewall of the backside illumination semiconductor image sensing device. The backside illumination semiconductor image sensing device further includes a first anti reflective coating (ARC) on a backside of the semiconductor substrate and a dielectric layer on the first anti reflective coating. Additionally, a radiation shielding layer is disposed on the dielectric layer. Moreover, the backside illumination semiconductor image sensing device has a photon blocking layer on the sidewall of the backside illumination semiconductor image sensing device. The at least a portion of a sidewall of the radiation shielding layer is not covered by the photon blocking layer and the photon blocking layer is configured to block photons penetrating into the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.