Semiconductor device
US9337267B2 · kind B2 · utility
0Cited by
1References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 21, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Jan 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A semiconductor device is provided with an electronic transit layer, an electron supply layer, a source region, a drain electrode, a source electrode and an insulated gate. In a region between the drain electrode and the insulated gate, a two-dimensional electron gas layer is configured to be generated at a hetero junction between the electronic transit layer and the electron supply layer. A part of the insulated gate is configured to face to the source region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.