Patent · US Active

Ferromagnet-free spin transistor and method for operating the same

US9337272B2 · kind B2 · utility

0Cited by
3References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 7, 2014
Grant dateMay 10, 2016
Priority date
Expiry dateOct 7, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N50/10
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A spin transistor includes: an input part that is made of a material exhibiting a spin Hall effect and configured to transfer electrons with a predetermined direction of spin to a connecting part; and the connecting part that receives the electrons with the predetermined direction of spin from the input part, rotates the spin of the electrons in accordance with a gate voltage applied to the gate electrode, and transfers the electrons to the output part.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.