Gallium nitride on high thermal conductivity material device and method
US9337278B1 · kind B1 · utility
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Key dates
| Filing date | Feb 25, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Feb 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments include but are not limited to semiconductor devices including a barrier layer, a gallium nitride channel layer having a Ga-face coupled with the barrier layer, and a thermoconductive layer having a thermal conductivity of at least 500 W/(m·K) within 1000 nanometers of a Ga-face of the gallium nitride channel layer. The semiconductor device may be a high-electron-mobility transistor or a semiconductor wafer. Methods for making the same also are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.