Very high aspect ratio contact
US9337292B1 · kind B1 · utility
4Cited by
0References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 26, 2014 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Nov 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with a very high aspect ratio contact has a deep trench in the substrate. A dielectric liner is formed on sidewalls and a bottom of the deep trench. A contact opening is formed through the dielectric liner at the bottom of the deep trench to expose the substrate, leaving the dielectric liner on the sidewalls. Electrically conductive material is formed in the deep trench to provide the very high aspect ratio contact to the substrate through the contact opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.