Nitride-based semiconductor device
US9337300B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2014 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Mar 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to an embodiment includes a nitride semiconductor layer, a gate electrode provided above the nitride semiconductor layer, a source electrode provided above the nitride semiconductor layer, a drain electrode provided above the nitride semiconductor layer at a side opposite to the source electrode with respect to the gate electrode, a first silicon nitride film provided above the nitride semiconductor layer between the drain electrode and the gate electrode, and a second silicon nitride film provided between the nitride semiconductor layer and the gate electrode, an atomic ratio of silicon to nitrogen in the second silicon nitride film being lower than an atomic ratio of silicon to nitrogen in the first silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.