Metal gate stack having TiAICN as work function layer and/or blocking/wetting layer
US9337303B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2014 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Jul 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal gate stack having a titanium aluminum carbon nitride (TiAlCN) as a work function layer and/or a multi-function blocking/wetting layer, and methods of manufacturing the same, are disclosed. In an example, an integrated circuit device includes a semiconductor substrate and a gate stack disposed over the semiconductor substrate. The gate stack includes a gate dielectric layer disposed over the semiconductor substrate, a multi-function blocking/wetting layer disposed over the gate dielectric layer, wherein the multi-function blocking/wetting layer includes TiAlCN, a work function layer disposed over the multi-function blocking/wetting layer, and a conductive layer disposed over the work function layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.