Metal oxide semiconductor device and method for forming the same
US9337339B1 · kind B1 · utility
6Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2014 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Dec 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
The present invention provides a metal oxide semiconductor (MOS) device, comprising a gate structure and an epitaxial structure. The gate structure is disposed on a substrate. The epitaxial structure is disposed in the substrate at two sides of the gate structure and apart thereof serves a source/drain of the MOS, wherein the epitaxial structure comprises: a first buffer layer with a second conductive type, a second buffer layer, and an epitaxial layer with a first conductive type complementary to the second conductive type. The present invention further provides a method of forming the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.