Seed used for crystalline silicon ingot casting
US9337375B2 · kind B2 · utility
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2Claims
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Key dates
| Filing date | Dec 23, 2013 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Jul 17, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2993
Abstract
The invention discloses a seed used for crystalline silicon ingot casting. A seed according to a preferred embodiment of the invention includes a crystal and an impurity diffusion-resistant layer. The crystal is constituted by at least one grain. The impurity diffusion-resistant layer is formed to overlay an outer surface of the crystal. A crystalline silicon ingot fabricated by use of the seed of the invention has significantly reduced red zone and yellow zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.