Methods of forming dilute nitride materials for use in photoactive devices and related structures
US9337377B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2012 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Apr 28, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Atomic layer deposition (ALD) or ALD-like deposition processes are used to fabricate dilute nitride III-V semiconductor materials. A first composition of process gases may be caused to flow into a deposition chamber, and a group V element other than nitrogen and one or more group III elements may be adsorbed over the substrate (in atomic or molecular form). Afterward, a second composition of process gases may be caused to flow into the deposition chamber, and N and one or more group III elements may be adsorbed over the substrate in the deposition chamber. An epitaxial layer of dilute nitride III-V semiconductor material may be formed over the substrate in the deposition chamber from the sequentially adsorbed elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.