Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure
US9337381B2 · kind B2 · utility
6Cited by
53References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2014 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Sep 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.