Light-emitting diode and fabrication method thereof

US9337384B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• LINGFENG YIN · Xiamen, CN
• Suhui Lin · Xiamen, CN
• Jiansen ZHENG · Xiamen, CN
• CHUANGUI LIU · Xiamen, CN
• YIDE OU · Xiamen, CN
• Qing Wang · Kowloon, CN

Key dates

• Filing date: Mar 10, 2015
• Grant date: May 10, 2016
• Expiry date: Mar 10, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A light-emitting diode includes a substrate; a light-emitting epitaxial layer, laminated by semiconductor material layers and formed over the substrate; a first current spreading layer over the light-emitting epitaxial layer; an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer, including three structure layers; a second metal barrier layer over the adhesive layer with alternating second current spreading layers and metal barrier layers; and a metal electrode layer over the second metal barrier layer.