Magnetic tunnel junction structure for MRAM device
US9337412B2 · kind B2 · utility
79Cited by
99References
12Claims
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Key dates
| Filing date | Sep 22, 2014 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Sep 22, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction stack is provided that includes nonmagnetic spacer layers between the free layer and the polarizer layer formed from magnesium oxide and tantalum nitride materials that balance the spin torques acting on the free layer. The design provided enables a deterministic final state for the storage layer and significantly improves the tunneling magnetoresistance value and switching characteristics of the magnetic tunnel junction for MRAM applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.