Patent · US Active

Method of processing a substrate

US9339868B2 · kind B2 · utility

0Cited by

7References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Joerg Ortner · Finkenstein, AT
Michael Sorger · Villach, AT

Key dates

Filing date	Apr 8, 2014
Grant date	May 17, 2016
Priority date	—
Expiry date	Apr 8, 2034

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/887
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a method of processing a substrate in accordance with an embodiment, a trench may be formed in the substrate, a stamp device may be disposed at least in the trench; at least one part of the trench that is free from the stamp device may be at least partially filled with trench filling material; and the stamp device may be removed from the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.