LCOS device and method of fabricating the same
US9341884B2 · kind B2 · utility
0Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2013 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Jun 28, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B5/0875
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a LCOS device including a silicon substrate, a first dielectric layer, a first mirror layer, a second dielectric layer, and a second mirror layer. The first dielectric layer is disposed on the silicon substrate. The first mirror layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first mirror layer. The second mirror layer is disposed on the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.