Photoresist and method of formation and use
US9341945B2 · kind B2 · utility
3Cited by
77References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2013 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Nov 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto a substrate. The first precursor material is turned into a plasma in a remote plasma chamber prior to being introduced into the deposition chamber. The resulting photoresist comprises a carbon backbone with carbon-carbon double bonds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.