Resistive random access memory (ReRAM) and conductive bridging random access memory (CBRAM) cross coupled fuse and read method and system
US9343147B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2014 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Mar 6, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
By arranging both a conductive and non-conductive resistive memory cell in a cross coupled arrangement to facilitate reading a data state the memory cells can have very small differences in their resistance values and still read correctly. This allows both of the memory cells' resistances to change over time and still have enough difference between their resistances to read the desired data state that was programmed. A pair of ReRAM or CBRAM resistive memory devices are configured as a one bit memory cell and used to store a single data bit wherein one of the resistive memory devices is in an ERASE condition and the other resistive memory devices of the pair is in a WRITE condition. Reading the resistance states of the resistive memory device pairs is accomplished without having to use a reference voltage or current since a trip-point is between the conductive states thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.