Interconnect structure having air gap and method of forming the same
US9343294B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2014 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Apr 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device includes forming a first dielectric layer overlying a substrate, forming at least a first opening in the first dielectric layer, forming a conformal dense layer lining the at least first opening in the first dielectric layer, forming a barrier layer overlying the conformal dense layer, forming a conductive feature in the at least first opening, removing a portion of the first dielectric layer between any two adjacent conductive features to form a second opening, wherein the second opening exposes the conformal dense layer between the two adjacent conductive features, and depositing between the two adjacent conductive features a second dielectric layer having an air gap formed therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.