Chemical mechanical planarization using nanodiamond
US9343321B2 · kind B2 · utility
3Cited by
12References
20Claims
0Family size
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Key dates
| Filing date | Feb 6, 2015 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Feb 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for chemical mechanical polishing of a substrate includes polishing the substrate at a stock removal rate of greater than about 2.5 Å/min to achieve a Ra of not greater than about 5.0 Å. The substrate can be a III-V substrate or a SiC substrate. The polishing utilizes a chemical mechanical polishing slurry comprising ultra-dispersed diamonds and at least 80 wt % water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.