Patent · US Active

Contact formation in Ge-containing semiconductor devices

US9343329B2 · kind B2 · utility

0Cited by
7References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 12, 2015
Grant dateMay 17, 2016
Priority date—
Expiry dateFeb 12, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/62
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A process for creating a contact on a Ge-containing contact region of a semiconductor structure, said process comprising the steps of:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.