Patent · US Active

Method to delineate crystal related defects

US9343379B2 · kind B2 · utility

0Cited by

2References

11Claims

0Family size

Assignee

SunEdison Semiconductor Limited · SG

Inventors

Jeffrey L. Libbert · O'Fallon, US
Lu Fei · Shanghai, CN

Key dates

Filing date	Oct 4, 2011
Grant date	May 17, 2016
Priority date	—
Expiry date	Oct 4, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/57
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

This invention generally relates to a process for detecting grown-in-defects in a semiconductor silicon substrate. The process includes contacting a surface of the semiconductor silicon substrate with a gaseous acid in a reducing atmosphere at a temperature and duration sufficient to grow grown-in -defects disposed in the semiconductor silicon substrate to a size capable of being detected by an optical detection device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.