Multi-finger large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field effect transistors on sapphire substrate

US9343544B2 · kind B2 · utility

Assignee

• UNIVERSITY OF SOUTH CAROLINA · US

Inventors

• Asif Khan · Irmo, US
• Vinod Adivarahan · Columbia, US

Key dates

• Filing date: Mar 24, 2015
• Grant date: May 17, 2016
• Expiry date: Mar 24, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/257

Abstract

MOSHFET devices are provided, along with their methods of fabrication. The MOSHFET device can include a substrate; a multilayer stack on the substrate; a ultra-thin barrier layer on the multilayer stack, wherein the ultra-thin barrier layer has a thickness of about 0.5 nm to about 10 nm; a dielectric, discontinuous thin film layer on portions of the ultra-thin barrier layer, wherein the dielectric, discontinuous thin film layer comprises SiO2; a plurality of source electrodes and drain electrodes formed directly on the ultra-thin barrier layer in an alternating pattern such that the dielectric, discontinuous thin film layer is positioned between adjacent source electrodes and drain electrodes; a plurality of gate electrodes on the dielectric, discontinuous thin film layer; and a gate interconnect electrically connecting the plurality of gate electrodes.