Semiconductor device and method for fabricating the same
US9343549B2 · kind B2 · utility
0Cited by
3References
4Claims
0Family size
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Key dates
| Filing date | Oct 9, 2013 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Mar 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes forming a first mask on a substrate, forming a first side wall of a fin by performing a first etching of the substrate using the first mask, forming a second mask on the substrate, the second mask being different from the first mask, and forming a second side wall of the fin by performing a second etching of the substrate using the second mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.