Selectively area regrown III-nitride high electron mobility transistor
US9343563B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2014 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Aug 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a HEMT device are provided. The method includes forming an ultra-thin barrier layer on the plurality of thin film layers. A dielectric thin film layer is formed over a portion of the ultra-thin barrier layer to leave exposed areas of the ultra-thin barrier layer. A SAG S-D thin film layer is formed over the exposed areas of the ultra-thin barrier layer while leaving the dielectric thin film layer exposed. The dielectric thin film layer is then removed to expose the underlying ultra-thin barrier layer. The underlying ultra-thin barrier layer is treating with fluorine to form a treated area. A source and drain is added on the SAG S-D thin film layer, and a dielectric coating is deposited over the ultra-thin barrier layer treated with fluorine such that the dielectric coating is positioned between the source and the drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.