Semiconductor device having high-resistance conductor structure, method of manufacturing the same and method of operating the same
US9343568B2 · kind B2 · utility
2Cited by
1References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 12, 2014 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Jun 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including a metal oxide semiconductor transistor, a Zener diode, and a resistor. The metal oxide semiconductor transistor includes a gate, a source and a drain. The resistor has one end electrically connected to the drain, wherein the resistor includes a high resistance which is sufficient for flowing most of current to pass the metal oxide semiconductor transistor. The Zener diode includes a cathode and an anode, in which the cathode is electrically connected the gate and another end of the resistor, and the anode is electrically connected to a gate body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.