Memory cells having heaters with angled sidewalls

US9343671B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Andrea Redaelli · Rogoredo, IT
• Giorgio Servalli · Ciserano, IT
• Pietro Petruzza · Arcore, IT
• Cinzia Perrone · Vimercate, IT

Key dates

• Filing date: Jan 19, 2015
• Grant date: May 17, 2016
• Expiry date: Jan 19, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive memory cells can include forming a first resistive memory cell having a first heater element angled with respect to a vertical plane, forming a second resistive memory cell adjacent to the first resistive memory cell and having a second heater element angled with respect to the vertical plane and toward the first heater, and forming a third resistive memory cell adjacent to the first resistive memory cell and having a third heater element angled with respect to the vertical plane and away from the first heater element.