Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices
US9343672B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2012 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Jul 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A nonvolatile memory cell includes first and second interlayer insulating films which are separated from each other and are stacked sequentially, a first electrode which penetrates the first interlayer insulating film and the second interlayer insulating film, a resistance change film which is formed along a side surface of the first electrode and extends parallel to the first electrode, and a second electrode which is formed between the first interlayer insulating film and the second interlayer insulating film. The second electrode includes a conductive film which is made of metal and a diffusion preventing film which prevents diffusion of a conductive material contained in the conductive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.