Patent · US Active

Photolithographic masks and fabrication method thereof

US9348215B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventor

Boxiu Cai · Shanghai, CN

Key dates

Filing date	Dec 26, 2013
Grant date	May 24, 2016
Priority date	—
Expiry date	Jul 4, 2034

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/38
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A photolithographic mask is provided. The photolithographic mask includes a substrate having a first surface configured as a light incidence plane of an exposure light and a second surface. The photolithographic mask also includes a plurality of scattering centers functioning as a refractive index disturbance inside the substrate. Further, the photolithographic mask includes a plurality of mask patterns on the second surface of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.