Non-volatile SRAM with multiple storage states
US9349440B1 · kind B1 · utility
20Cited by
16References
33Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 11, 2014 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Dec 11, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/33
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Technologies are generally described herein for a non-volatile static random access memory device with multiple storage states. The multi-storage state non-volatile random access memory device has two or more memory cells. Each memory cell may include one or more programmable resistive devices that may be dynamically programmed to configure the memory cell in a particular logic state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.