Method of operating non-volatile memory device
US9349456B2 · kind B2 · utility
4Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 2012 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Feb 14, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3409
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of operating a non-volatile memory device includes erasing a memory cell block, supplying a first drain turn-on voltage higher than a target level to the drain select line of the memory cell block, and performing a soft program operation by supplying a soft program voltage to the word lines of the memory cell block.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.