Read threshold estimation in analog memory cells using simultaneous multi-voltage sense
US9349467B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2014 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Jul 28, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/028
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method includes dividing a group of analog memory cells into multiple subsets. The memory cells in the group are sensed simultaneously by performing a single sense operation, while applying to the subsets of the memory cells respective different sets of read thresholds, so as to produce respective readout results. An optimal set of the read thresholds is estimated by processing the multiple readout results obtained from the respective subsets using the different sets of the read thresholds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.