Patent · US Active

Read threshold estimation in analog memory cells using simultaneous multi-voltage sense

US9349467B2 · kind B2 · utility

0Cited by
7References
17Claims
0Family size

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Key dates

Filing dateJul 28, 2014
Grant dateMay 24, 2016
Priority date
Expiry dateJul 28, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C29/028
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method includes dividing a group of analog memory cells into multiple subsets. The memory cells in the group are sensed simultaneously by performing a single sense operation, while applying to the subsets of the memory cells respective different sets of read thresholds, so as to produce respective readout results. An optimal set of the read thresholds is estimated by processing the multiple readout results obtained from the respective subsets using the different sets of the read thresholds.

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