Boundary word line operation in nonvolatile memory
US9349479B1 · kind B1 · utility
8Cited by
137References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2014 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Nov 18, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5641
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
One or more word lines in a Multi Level Cell (MLC) block are identified as being at high risk of read disturb errors and data is selectively copied from such high risk word lines to a location outside the MLC block where the copy is maintained. Subsequent read requests for the data may be directed to the copy of the data outside the MLC block.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.