Plasma etching method and plasma etching apparatus
US9349574B2 · kind B2 · utility
2Cited by
1References
8Claims
0Family size
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Key dates
| Filing date | Aug 5, 2013 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Aug 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask. Furthermore, in the plasma etching method, the plasma process and the etching process are repeated at least two or more times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.