Semiconductor memory device and method of manufacturing the same
US9349597B2 · kind B2 · utility
1Cited by
6References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2012 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Sep 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes conductive films and insulating layers alternately stacked on a substrate, substantially vertical channel layers penetrating the conductive films and the insulating layers, multilayer films including a charge storage film interposed between the conductive films and the substantially vertical channel layers, and a first anti-diffusion film formed on etched surfaces of the conductive films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.