Semiconductor device manufacturing method and semiconductor device
US9349600B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2014 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Nov 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device manufacturing method includes: forming an element isolation insulating film in a semiconductor substrate; forming a first film on a surface of the semiconductor substrate; forming a second film on the element isolation insulating film and on the first film; forming a first resist pattern that includes a first open above the element isolation insulating film in a first region; removing the second film on the element isolation insulating film in the first region to separate the second film in the first region into a plurality of parts by performing first etching; forming a third film on the second film in the first region; forming a first gate electrode on the third film in the first region; and forming a first insulating film that includes the first to third films under the first gate electrode by patterning the first to third films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.