Semiconductor devices including conductive features with capping layers and methods of forming the same
US9349689B2 · kind B2 · utility
5Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2012 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Feb 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices, methods of manufacture thereof, and methods of forming conductive features thereof are disclosed. A semiconductor device includes an insulating material layer disposed over a workpiece. The insulating material layer includes a silicon-containing material comprising about 13% or greater of carbon (C). A conductive feature is disposed within the insulating material layer. The conductive feature includes a capping layer disposed on a top surface thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.