Method for forming deep trench isolation for RF devices on SOI

US9349748B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Herb He Huang · Shanghai, CN
• Haiting Li · Beijing, CN
• Xingcheng Jin · Shanghai, CN
• Xinxue Wang · Shanghai, CN
• Hongbo Zhao · Nanjing, CN
• Fucheng Chen · Shanghai, CN
• Yanghui Xiang · Shanghai, CN

Key dates

• Filing date: Dec 8, 2014
• Grant date: May 24, 2016
• Expiry date: Dec 8, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors.