Semiconductor element and manufacturing method and operating method of the same
US9349830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2013 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Sep 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/813
Abstract
A semiconductor element and a manufacturing method and an operating method of the same are provided. The semiconductor element includes a substrate, a first well, a first heavily doping region, at least a second heavily doping region, a gate layer, a third heavily doping region, and a fourth heavily doping region. The first well and the third heavily doping region are disposed on the substrate. The first and fourth heavily doping regions are disposed in the first well. The second heavily doping region is disposed in the first heavily doping region. The gate layer is disposed on the first well. The first, third, and fourth heavily doping regions having a first type doping are separated from one another. The first well and the second heavily doping region have a second type doping complementary to the first type doping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.