Semiconductor device and method of manufacturing the same

US9349854B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Markus Zundel · Egmating, DE
• Peter Brandl · Linz, AT

Key dates

• Filing date: Oct 4, 2013
• Grant date: May 24, 2016
• Expiry date: Oct 4, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/114

Abstract

A semiconductor device includes a vertical IGFET in a first area of a semiconductor body, the vertical IGFET having a drift zone between a body zone and a drain electrode, the drift zone having a vertical dopant profile of a first conductivity type being a superposition of a first dopant profile declining with increasing distance from the drain electrode and dominating the vertical dopant profile in a first zone next to the drain electrode and a second dopant profile being a broadened peak dopant profile and dominating the vertical dopant profile in a second zone next to the body zone.