Semiconductor device including first interface and second interface as an upper surface of a convex protruded from first interface and manufacturing device thereof

US9349856B2 · kind B2 · utility

Assignee

• TOYODA GOSEI CO., LTD. · JP

Inventor

• Toru Oka · Kiyosu, JP

Key dates

• Filing date: Feb 12, 2014
• Grant date: May 24, 2016
• Expiry date: Feb 12, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62

Abstract

A semiconductor device includes a first n-type semiconductor layer, a p-type semiconductor layer, a second n-type semiconductor layer and a trench. The first n-type semiconductor layer includes a first interface and a second interface. The second interface forms an upper surface of a convex protruded from the first interface. The p-type semiconductor layer is stacked on the first n-type semiconductor layer and includes a first region stacked on the first interface and a second region stacked on the second interface. The first region is uniformly continuous with the second region. The second n-type semiconductor layer is stacked on the p-type semiconductor layer. The trench is depressed from the second n-type semiconductor layer through the p-type semiconductor layer into the convex of the first n-type semiconductor layer.