β-Ga2O3-based single crystal substrate
US9349915B2 · kind B2 · utility
2Cited by
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13Claims
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Key dates
| Filing date | Feb 26, 2015 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Feb 26, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A β-Ga2O3-based single crystal substrate includes a β-Ga2O3-based single crystal. The β-Ga2O3-based single crystal includes a full width at half maximum of an x-ray rocking curve of less than 75 seconds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.