Patent assignee · JP · COMPANY

Koha Co., Ltd.

44Patents
27Active
44Granted
46Portfolio score

Filing activity: Jan 6, 1997 → Oct 4, 2017 · 7 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US5836676A Light emitting display apparatus Emerging Cross-Sectional Technologies 220 Expired
US6445011B1 Light-emitting diode Electricity 52 Expired
US6872585B2 LED device and manufacturing method thereof Electricity 38 Expired
US7279723B2 LED lamp Emerging Cross-Sectional Technologies 38 Expired
US6977397B2 Light emitting element and method of making same Electricity 34 Expired
US6236382A Light emitting diode display unit Electricity 29 Expired
US6496162B2 Light emitting diode display unit Electricity 23 Expired
US6834977B2 Light emitting device Emerging Cross-Sectional Technologies 19 Expired
US6812481B2 LED device and manufacturing method thereof Electricity 19 Expired
US7608472B2 Light emitting element and method of making same Electricity 12 Active
US6075214A Push button assembly for a vending machine Electricity 11 Expired
US6713877B2 Light-emitting diode Electricity 11 Expired
US7319249B2 Light emitting element and method of making same Electricity 10 Expired
US7629615B2 Light emitting element and method of making same Electricity 6 Active
US9166127B2 Light source module Electricity 4 Active
US10975497B2 Light emitting device Electricity 3 Active
US7285803B2 Light-emitting diode lamp having a terminal portion with a notch portion Emerging Cross-Sectional Technologies 3 Expired
US7977673B2 Semiconductor layer with a Ga2O3 system Electricity 3 Expired
US7524741B2 Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device Electricity 3 Expired
US9349915B2 β-Ga2O3-based single crystal substrate Emerging Cross-Sectional Technologies 2 Active
US7768029B2 LED lamp Emerging Cross-Sectional Technologies 2 Active
US9431489B2 β-Ga2O3-based single crystal substrate Electricity 2 Active
US9926646B2 Method for growing B-Ga2O3-based single crystal Chemistry; Metallurgy 2 Active
US8592289B2 Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer Electricity 2 Active
US9634216B2 Light emitting device Electricity 2 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.