Patent · US Active

Sensing circuits for use in low power nanometer flash memory devices

US9355734B2 · kind B2 · utility

3Cited by
2References
26Claims
0Family size

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Inventors

Key dates

Filing dateMar 4, 2014
Grant dateMay 31, 2016
Priority date—
Expiry dateMar 4, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2216/04
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Improved sensing circuits for use in low power nanometer flash memory devices are disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.