Method for fabrication of crack-free ceramic dielectric films
US9355761B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2014 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Jun 7, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24975
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.