High quality devices growth on pixelated patterned templates
US9355840B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Nov 7, 2011 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Nov 7, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a template material for growing semiconductor materials and/or devices, comprises the steps of: (a) providing a substrate with a dielectric layer on the substrate; and (b) forming a pixelated pattern on the dielectric layer, the pattern comprising a plurality of discrete groups of structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.