Methods of fabricating printable compound semiconductor devices on release layers
US9355854B2 · kind B2 · utility
75Cited by
1References
31Claims
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Key dates
| Filing date | Aug 4, 2011 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | May 21, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating transferable semiconductor devices includes providing a release layer including indium aluminum phosphide on a substrate, and providing a support layer on the release layer. The support layer and the substrate include respective materials, such as arsenide-based materials, such that the release layer has an etching selectivity relative to the support layer and the substrate. At least one device layer is provided on the support layer. The release layer is selectively etched without substantially etching the support layer and the substrate. Related structures and methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.